收藏本站
DMP22D6UT
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
?
?
?
?
?
?
?
?
SOT-523
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Drain
D
Gate
Source
ESD PROTECTED
TOP VIEW
Gate
Protection
Diode
Equivalent Circuit
G S
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
I DM
-430
-310
-750
mA
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1.0
± 1.0
V
μ A
μ A
V GS = 0V, I D = -250mA
V DS = -20V, V GS = 0V
V GS = ± 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.5
?
?
0.7
1.1
-1.0
1.1
1.6
V
Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
1.7
2.6
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
200
?
?
?
?
-1.4
ms
V
V DS =10V, I D = 0.2A
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP22D6UT
Document number: DS31585 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMP2305U-7 MOSFET P-CH 20V 4.2A SOT-23
DMP3008SFG-7 MOSF P CH 30V POWERDI 3333-8
DMP3010LK3-13 MOSFET P CH 30V 17A TO252
DMP3015LSS-13 MOSFET P-CH 30V 13A 8-SOIC
DMP3020LSS-13 MOSFET P-CH 30V 12A 8-SOIC
DMP3030SN-7 MOSFET P-CH 30V 700MA SC59-3
DMP3035LSS-13 MOSFET P-CH 30V 12A 8-SOIC
DMP3056LDM-7 MOSFET P-CH 30V 4.3A SOT-26
相关代理商/技术参数
DMP22M2UPS-13 功能描述:MOSFET P-CH 20V POWERDI5060-8 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:P 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:20V 电流 - 连续漏极（Id）（25°C 时）:60A（Tc） 驱动电压（最大 Rds On，最小 Rds On）:2.5V，10V 不同 Id 时的 Vgs（th）（最大值）:1.4V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:476nC @ 10V Vgs（最大值）:±12V 不同 Vds 时的输入电容（Ciss）（最大值）:12826pF @ 10V FET 功能:- 功率耗散（最大值）:2.3W（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:2.5 毫欧 @ 25A，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:PowerDI5060-8 封装/外壳:8-PowerTDFN 标准包装:1
DMP2305U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2305U-7 功能描述:MOSFET P-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2305UQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMP2305UVT-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V TSOT26 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P CH 20V 4.23A TSOT26 制造商:Diodes Incorporated 功能描述:20V P-CH MOSFET 制造商:Diodes Zetex 功能描述:Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R
DMP25/22NK 制造商:Alpha 3 Manufacturing 功能描述:
DMP2540UCB9-7 功能描述:MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3008SFG-13 功能描述:MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube